VIAS Encyclopedia provides a collection of tables and definitions commonly needed in science and engineering.


Rectifier Diode

General-use rectifying diodes have permissible reverse voltages ranging from around 100 to 1000 V and can accomplish currents up to several ten amperes. With these diodes attention should be paid to the power dissipation developing at the diode. Since the forward voltage for Si diodes lies between 0.6 and 1.0 V (depending upon amperage and temperature), the power dissipation developing at a diode, which conducts a current of 10 A, for example, will be approximately 8 W. Therefore it is necessary, when appropriately dimensioning the heat sink, to ensure that the temperature of the junction does not exceed 125 degrees Celsius. Following is a short list of commonly used diodes:

Device Material Function VRM [V] I0 [mA] Pv [mW] IR [nA] trr [nsek]
AA143 Ge D 25 60 80 4000 -
AA144 Ge U 90 45 80 25000 -
BA170 Si S 20 150 300 50 100
BAV20 Si U 200 200 400 100 50
BAW75 Si S 25 150 500 100 4
BAX12 Si K 90 400 400 100 35
BAY80 Si U 150 200 - 100 50
1N4148 Si S 75 150 500 25 4
1N4448 Si S 75 150 500 25 4
D...demodulation diode    G...rectifying diode    K...contact protection diode    S...switching diode    U...universal diode    URM...max. reverse voltage    I0...max. forward current    Pv...max. dissipation power    IR...reverse current    trr...delay

Since rectifier diodes are often used in rectifier bridges, the semiconductor manufacturers also offer complete, ready-to-use rectifier bridges, which are cast in either a plastic or a metal housing.
Arrangement of diodes in a rectifier bridge.


Last Update: 2010-12-15