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Hunter-Goodrich Bias MethodAuthor: Leonard Krugman
Fig. 5-5. Hunter-Goodrich bias method. As in the preceding cases, the effect of the base and emitter circuit resistances (re + rb) can be neglected in the calculations. The values of RF and EF depend upon the value of fixed bias desired. For example, assume that a fixed bias value Ib2 of 300 μa will provide the additional stability needed, and a battery EF = 10 volts is available. Then . The current through the self bias resistor RB is Ib1 = Ib + Ib2 = 400 + 300 = 700 μa; then
In comparison, RB = 25,000 ohms in the simple self bias case. Since the input resistance of the transistor is small compared to RF, practically all of the stabilizing current flows into the base-emitter circuit. The Hunter-Goodrich bias method is extremely useful when a high degree of circuit stability is needed. Its particular disadvantage is that it requires two separate battery supplies.
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